GT10G131 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT Strobe Flash Applications

GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: V_GE = 4.0 V (min) (@I_C = 200 A)
• Peak collector current: I_C = 200 A (max)
• Built-in zener diode between gate and emitter
• SOP-8 package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
400
V
Gate-emitter voltage
DC
V_GES
±6
V
Pulse
V_GES
±8
Collector current
Pulse
(Note 1)
I_CP
200
A
Collector power
(Note 2a)
P_C (1)
1.9
W
dissipation(t=10 s)
(Note 2b)
P_C (2)
1.0
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/
current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/Derating
Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1.2.3 Emitter
4
Gate
5.6.7.8 Collector
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1C
Weight: 0.08 g (typ.)
Circuit Configuration
8765
Thermal Characteristics
Characteristics
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Symbol
R_{th (j-a)} (1)
R_{th (j-a)} (2)
Marking (Note 3)
Rating
65.8
125
Unit
°C/W
°C/W
1234
10G131
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02