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DSR520CT Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Speed Switching Applications | |||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR520CT
High-Speed Switching Applications
⢠Low reverse current: IR = 5 μA (max)
0.6±0.05
DSR520CT
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
Maximum (peak) reverse voltage
VRM
32
V
Reverse voltage
VR
30
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
200
mA
Surge current (10 ms)
IFSM
1
A
Power dissipation
Junction temperature
P
150*
mW
Tj
125
°C
CST2
Storage temperature range
Tstg
â55 to 125
°C
Operating temperature range
Topr
â40 to 100
°C
JEDEC
â
* Mounted on a glass-epoxy circuit board of 20 mm à 20 mm,
JEITA
â
pad dimensions of 4 mm à 4 mm.
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
â IF = 1 mA
â IF = 10 mA
â IF = 200 mA
â VR = 30 V
â VR = 0, f = 1 MHz
Min Typ. Max Unit
â 0.21 â
â
0.28 0.39
V
â 0.52 0.6
â
â
5
μA
â
18
â
pF
Equivalent Circuit (top view)
Marking
86
1
2009-10-01
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