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DSR05S30U Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Diode Silicon Epitaxial Schottky Barrier Type | |||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR05S30U
DSR05S30U
High Speed Switching Applications
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
VR
IO
IFSM
Tj
Tstg
30
V
500 ï¼
mA
5
A
125
°C
â55 to 125
°C
*: Mounted on a glass-epoxy circuit board of 20 Ã 20 mm,
pad dimensions of 4 Ã 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
USC
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum JEDEC
â
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
JEITA
â
TOSHIBA
1-1E1A
Weight: 4.5 mg (typ.)
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR(1)
CT
Test
Circuit
Test Condition
â IF = 10mA
â IF = 200mA
â IF = 500mA
â VR = 30V
â VR = 0, f = 1 MHz
Min Typ. Max Unit
â 0.31 â
â 0.43 â
V
â 0.50 0.55
â 0.22
5
μA
⯠120 â¯
pF
Marking
GP
Equivalent Circuit (top view)
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
1
2009-05-11
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