DSR05S30CTB Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Diode Silicon Epitaxial Schottky Barrier Type

DSR05S30CTB
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR05S30CTB
High Speed Switching Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
0.7±0.02
Characteristic
Symbol
Rating
Unit
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
V_R
I_O
I_FSM
T_j
T_stg
30
V
500＊
mA
5
A
125
°C
−55 to 125
°C
0.8±0.05
0.05_±0.03
0.38+-00..0023
*: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm,
pad dimensions of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
CST2B
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
JEDEC
―
JEITA
―
TOSHIBA
1-1V1B
Weight: 0.7 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R(1)
C_T
Test
Circuit
Test Condition
― I_F = 10mA
― I_F = 200mA
― I_F = 500mA
― V_R = 30V
― V_R = 0, f = 1 MHz
Min Typ. Max Unit
― 0.31 ―
― 0.42 ―
V
― 0.50 0.55
― 0.20
5
μA
⎯ 120 ⎯
pF
Marking
Pin Assignment (top view)
70
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
1
2009-08-03