DSF521CT Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF521CT
DSF521CT
High Speed Switching Application
Low forward voltage : V_{F (3)} = 0.5V (max)
Abusolute Maximum Ratings (Ta = 25°C)
0.6±0.05
Unit: mm
Characteristic
Symbol
Rating
Unit
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
V_R
I_FM
I_O
I_FSM
P*
30
V
300
mA
200
mA
1
A
150
mW
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
Operating temperature range
T_opr
−40 to 100
°C
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
CST2
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 5mA
― I_F = 200mA
― V_R = 10V
― V_R = 30V
― V_R = 0, f = 1 MHz
Min Typ. Max Unit
―
0.2
―
― 0.24 ―
V
― 0.45 0.5
―
―
20
μA
―
―
30
⎯
34
⎯
pF
Equivalent Circuit (top view)
Marking
8867
1
2009-06-26