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DSF05S30CTB Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Diode Silicon Epitaxial Schottky Barrier Type | |||
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DSF05S30CTB
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF05S30CTB
High Speed Switching Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
0.7±0.02
Characteristic
Symbol
Rating
Unit
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
VR
IO
IFSM
Tj
Tstg
30
V
500ï¼
mA
5
A
125
°C
â55 to 125
°C
0.8±0.05
0.05±0.03
0.38+-00..0023
*: Mounted on a glass-epoxy circuit board of 20 mm à 20 mm,
pad dimensions of 4 mm à 4 mm.
CST2B
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
JEDEC
â
JEITA
â
TOSHIBA
1-1V1A
Weight: 0.7 mg (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR(1)
CT
Test
Circuit
Test Condition
â IF = 10 mA
â IF = 200 mA
â IF = 500 mA
â VR = 30 V
â VR = 0, f = 1 MHz
Min Typ. Max Unit
â 0.22 â
â 0.34 â
V
â 0.40 0.45
â
4
50
μA
⯠120 â¯
pF
Marking
71
Pin Assignment (top view)
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
1
2009-08-03
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