DSF01S30SC Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Speed Switching Application

DSF01S30SC
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF01S30SC
High-Speed Switching Application
Unit: mm
Abusolute Maximum Ratings (Ta = 25°C)
２
Characteristic
Symbol
Rating
Unit
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
V_R
I_O
I_FSM
T_j
T_stg
30
V
100*
mA
2
A
125
°C
−55 to 125
°C
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad
dimensions of 4 × 4 mm.
１
0 .32±0.03
0.27±0.02
0.025±0.015
１： CATHODE
２： ANODE
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
SC2
JEDEC
―
JEITA
―
TOSHIBA
1-1R1A
Weight: 0.17 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
V_F(1)
V_F(2)
I_R(1)
I_R(2)
C_T
Test
Circuit
Test Condition
― I_F = 10 mA
― I_F = 100 mA
― V_R = 10 V
― V_R = 30 V
― V_R = 0, f = 1 MHz
Min Typ. Max Unit
― 0.27 0.3
V
― 0.41 0.5
V
―
―
7
μA
―
―
50
μA
⎯
9.3
⎯
pF
Marking
Equivalent Circuit (Top View)
1
2009-12-03