DF6F68MCTC Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – ESD Protection Diodes Silicon Epitaxial Planar

ESD Protection Diodes Silicon Epitaxial Planar
DF6F6.8MCTC
DF6F6.8MCTC
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Features
(1) ESD protection for up to 4 high-speed data lines and 1 Bus line.
(2) Ultra compact packaging for easy configuration in any ESD protection circuits.
(3) Low Input/output-to-ground capacitance: C_t-GND(1) = 0.6 pF (typ.).
3. Packaging and Internal Circuit Pin Assignment
1: I/O 1
2: GND
3: I/O 2
4: I/O 3
5: V_BUS
6: I/O 4
CST6C
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
Characteristics
Symbol Note
Rating
Unit
Junction temperature
T_j
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-05-24
Rev.2.0