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DF6A6.8FU Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD). | |||
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DF6A6.8FU
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF6A6.8FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z The incorporation of four devices in an ultra-compact package reduces
the number of parts and lowers assembly cost.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
200
mW
Tj
150
°C
Tstg
â55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
1.CATHODE1
2.CATHODE2
3.ANODE2
4.CATHODE3
5.CATHODE4
6.ANODE1
temperature/current/voltage and the significant change in
JEDEC
â¯
temperature, etc.) may cause this product to decrease in the
JEITA
â¯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
1-2T1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 6.8 mg (typ.)
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5mA
IZ = 5mA
VR = 5V
VR = 0, f = 1MHz
Min Typ. Max Unit
6.4 6.8 7.2
V
â
â
25
â¦
â
â
0.5 μA
â
45
â
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 30 kV
1
2007-11-01
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