DF5G7M2N Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – ESD Protection Diodes Silicon Epitaxial Planar

ESD Protection Diodes Silicon Epitaxial Planar
DF5G7M2N
DF5G7M2N
1. Applications
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
DFN5
1 : I/O 1
2 : GND
3 : I/O 2
4 : I/O 3
5 : I/O 4
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
V_ESD
(Note 1)
±12
kV
Electrostatic discharge voltage (IEC61000-4-2)(Air)
±15
Peak pulse power
Peak pulse current
Junction temperature
Storage temperature
P_PK
50
W
I_PP
(Note 2)
2.5
A
T_j
150

T_stg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
Start of commercial production
2015-04
1
2015-06-30
Rev.2.0