DF5A8.2LF_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

TOSHIBA Diodes for Protecting against ESD
DF5A8.2LF
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
DF5A8.2LF
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
• Low Terminal capacitance (between Cathode and Anode)
: C_T = 5.0 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
P
200
mW
T_j
125
°C
T_stg
−55 ~ 125
°C
JEDEC
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
⎯
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
⎯
1-3H1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.014 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
Z_ZK
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
I_Z = 0.5 mA
V_R = 5 V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
7.8 8.2 8.6
V
⎯
⎯
60
Ω
⎯
⎯
100
Ω
⎯
⎯
0.5
μA
⎯
5.0
⎯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 6 kV
1
2007-11-21