|
DF5A8.2JE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD). | |||
|
DF5A8.2JE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A8.2JE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
P
100
MW
Tj
150
°C
Tstg
â55~150
°C
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
â¯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
â¯
1-2W1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.003 g (typ.)
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 6.5 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
7.7 8.2 8.7
V
â
â
20
Ω
â
â
0.5
μA
â
38
â
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 30 kV
1
2007-11-01
|
▷ |