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DF5A8.2CFU Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD). | |||
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DF5A8.2CFU
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A8.2CFU
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
z Low Terminal capacitance (between Cathode and Anode)
: CT = 19 pF (TYP)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
1.CATHODE 1
Power dissipation
P
200
mW
2. ANODE
3.CATHODE2
Junction temperature
Storage temperature range
Tj
150
°C
4.CATHODE3
5.CATHODE4
Tstg
â55~150
°C
JEDEC
â¯
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
â¯
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-2V1B
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.0062 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 6.5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
7.8 8.2 8.6
V
â
â
20
Ω
â
â
0.5
μA
â¯
19
â¯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 15 kV
1
2007-11-01
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