DF5A6.8F_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD)

TOSHIBA Diodes for Protecting against ESD
DF5A6.8F
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
DF5A6.8F
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
200
MW
1.CATHODE 1
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
2. ANODE
3.CATHODE2
4.CATHODE3
Note: Using continuously under heavy loads (e.g. the application of high
5.CATHODE4
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
⎯
operating temperature/current/voltage, etc.) are within the absolute
TOSHIBA
1-3H1A
maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.014 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
Z_ZK
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
I_Z = 0.5 mA
V_R = 5 V
V_R = 0, f = 1 MHz
Min Typ. Max Unit
6.4 6.8 7.2
V
―
10
25
Ω
―
30
―
Ω
―
―
0.5
μA
―
45
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 30kV
Criterion: No damage to device elements
1
2007-11-21