DF5A6.8F Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A6.8F
Diodes for Protecting against ESD
DF5A6.8F
Unit: mm
• The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
• The zener voltage corresponds to the E24 Series.
Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T_j
T_stg
Rating
Unit
200
MW
125
°C
−55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
1-3H1A
Weight: 0.014 g (typ.)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
V_Z
I_Z = 5 mA
Z_Z
I_Z = 5 mA
Z_ZK
I_Z = 0.5 mA
I_R
V_R = 5 V
C_T
V_R = 0, f = 1 MHz
6.4 6.8 7.2
V
―
10
25
Ω
―
30
―
Ω
―
―
0.5 µA
―
45
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 30kV
Marking
Equivalent Circuit (Top View)
1
2004-11-08