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DF5A6.2LJE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD). | |||
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DF5A6.2LJE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A6.2LJE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
⢠The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
⢠Low Terminal capacitance (between Cathode and Anode)
: CT = 6.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Symbol
P
Tj
Rating
Unit
100
mW
150
°C
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Storage temperature range
Tstg
â55~150
°C
JEDEC
â¯
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
â¯
1-2W1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.003 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 5V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
5.9 6.2 6.5
V
â¯
â¯
50
Ω
â¯
â¯
2.5
μA
â¯
6.5
â¯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 8 kV
1
2007-11-01
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