DF5A5.6F Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

TOSHIBA Diodes for Protecting against ESD
DF5A5.6F
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
DF5A5.6F
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
P
200
mW
T_j
125
°C
1.CATHODE 1
2. ANODE
Storage temperature range
T_stg
−55~125
°C
3.CATHODE2
4.CATHODE3
Note: Using continuously under heavy loads (e.g. the application of high
5.CATHODE4
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
⎯
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
1-3H1A
Weight: 0.014 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
V_R = 2.5 V
V_R = 0, f = 1 MHz
Min Typ. Max Unit
5.3 5.6 6.0
V
―
―
40
Ω
―
―
1.0
μA
―
65
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 30 kV
1
2007-11-21