DF5A3.6CJE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Diodes for Protecting against ESD Epitaxial Planar Type

DF5A3.6CJE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A3.6CJE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
z Low terminal capacitance : C_T =52 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
P
100
mW
T_j
150
°C
T_stg
−55~150
°C
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
⎯
temperature/current/voltage and the significant change in
JEITA
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
1-2W1A
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Weight: 0.0062 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
V_R = 1.8 V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
3.4 3.6 3.8
V
―
―
130
Ω
―
― 100 μA
⎯
52
⎯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 15 kV
Criterion: No damage to device elements
1
2007-11-01