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DF5A3.3FU Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD) | |||
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TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A3.3FU
DF5A3.3FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
P
200
mW
Tj
125
°C
1.CATHODE 1
2. ANODE
Storage temperature range
Tstg
â55~125
°C
3.CATHODE2
4.CATHODE3
Note: Using continuously under heavy loads (e.g. the application of high
5.CATHODE4
temperature/current/voltage and the significant change in
JEDEC
â¯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
â¯
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
1-2V1B
Weight: 0.0062g (typ.)
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 1 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
3.1 3.3 3.5
V
â
â
130
â¦
â
â
20
μA
â 115 â
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 30 kV
Criterion: No damage to device elements
1
2007-11-01
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