DF3A8.2LFV Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD)

DF3A8.2LFV
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A8.2LFV
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of two devices in an ultra-compact package enables a
reduction in the number of parts and in the mounting cost.
• Low terminal capacitance: C_T = 5.0 pF (typ.)
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
150 *
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
VESM
1. CATHODE1
2. CATHODE2
3. ANODE
JEDEC
―
JEITA
―
TOSHIBA
1-1Q1B
Weight: 0.0015 g (typ.)
Electrical Characteristics (Ta = 25°C)
0.5mm
0.45mm
0.45mm
0.4mm
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
V_R = 5 V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
7.8 8.2 8.6
V
⎯
⎯
60
Ω
⎯
⎯
0.5
μA
⎯
5.0
⎯
pF
1
2007-11-01