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DF3A8.2LFU_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD)
DF3A8.2LFU
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A8.2LFU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
• Low terminal capacitance : CT = 5.0 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
−55 ~ 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
1-2P1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.006 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
ZZK
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
7.8 8.2 8.6
V
⎯
⎯
60
Ω
⎯
⎯
100
Ω
⎯
⎯
0.5
μA
⎯
5.0
⎯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 6kV
Criterion: No damage to device elements
Marking
FU
Equivalent Circuit
(top view)
1
2007-11-01