DF3A8.2LFE_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD)

DF3A8.2LFE
TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type
DF3A8.2LFE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
• Low terminal capacitance: C_T = 5.0 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 ~ 125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-2SA1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.0023 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Symbol
V_Z
Z_Z
Z_ZK
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
I_Z = 0.5 mA
V_R = 5 V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
7.8 8.2 8.6
V
⎯
⎯
60
Ω
⎯
⎯
100
Ω
⎯
⎯
0.5
μA
⎯
5.0
⎯
pF
Guaranteed Level of ESD Immunity
Marking
Equivalent Circuit
(top view)
Test Condition
ESD Immunity Level
FU
IEC61000-4-2
(contact discharge)
± 6 kV
Q1 Q2
1
2007-11-01