DF3A8.2FV Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD)

DF3A8.2FV
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A8.2FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
• Incorporating two devices in a single ultra-compact package reduces the
number of parts and lowers the mounting cost.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
P*
150
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
1.2±0.05
0.8±0.05
Unit: mm
1
2
3
VESM
1. CATHODE1
2. CATHODE2
3. ANODE
JEDEC
⎯
JEITA
⎯
TOSHIBA
1-1Q1B
Weight: 0.0015g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Zener voltage
V_Z
Dynamic impedance
Z_Z
Reverse current
I_R
Terminal capacitance
(between Cathode and Anode)
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
V_R = 6.5 V
V_R = 0, f = 1MHz
Min Typ. Max Unit
7.7 8.2 8.7
V
―
―
20
Ω
―
―
0.5
μA
―
38
―
pF
1
2007-11-01