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DF3A8.2FU Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD) | |||
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DF3A8.2FU
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A8.2FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
⢠The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
⢠Low terminal capacitance: CT = 5.0 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
â¯
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
â¯
1-2P1A
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 5 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
7.7 8.2 8.7
V
â¯
â¯
20
Ω
â¯
â¯
0.5
μA
â
38
â
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 30 kV
Criterion: No damage to device elements
1
2007-11-01
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