DF3A6.8UFU Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diodes for Protecting against ESD

TOSHIBA Diodes for Protecting against ESD
DF3A6.8UFU
ESD Protection Diode
* This device is intended for electrostatic discharge (ESD) protection and
should not be used for any other purpose, including the constant-voltage
diode applications.
**This device is not a Zener diode.
DF3A6.8UFU
Unit: mm
Abusolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
100
mW
T_j
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
―
―
1-2P1A
Weight: 6.0 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse stand-off voltage
Reverse voltage
Reverse current
Total capacitance
(between Cathode and Anode)
Forward stand-off voltage
Symbol
V_RWM
V_R
I_R
C_T
V_F
Test Condition
―
I_R = 1mA
V_RWM = 5 V
V_R = 0 V, f = 1 MHz
I_F = 1mA
Min Typ. Max Unit
―
―
5.0
V
5.3 6.8
―
V
―
―
0.5
μA
―
―
2.5
pF
―
25
―
V
Marking
Equivalent Circuit (top view)
0V
Start of commercial production
2007-11
1
2014-03-01