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DF3A6.8LFE_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD). | |||
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DF3A6.8LFE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A6.8LFE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
⢠The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
⢠Low terminal capacitance: CT = 6.0 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
â55 ~ 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
â¯
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
â¯
1-2SA1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.0023 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
ZZK
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
6.5 6.8 7.1
V
â¯
â¯
50
Ω
â¯
â¯
100
Ω
â¯
â¯
0.5
μA
â¯
6.0
â¯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 8 kV
1
2007-11-01
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