DF3A6.8LFE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Diodes for Protecting Against ESD

DF3A6.8LFE
TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type
DF3A6.8LFE
Diodes for Protecting Against ESD
Unit: mm
· Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
· Zener voltage correspond to E24 Series.
· Low total capacitance: CT = 6.0 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T_j
T_stg
Rating
Unit
100
mW
125
°C
-55 to 125
°C
JEDEC
JEITA
TOSHIBA
―
―
1-2SA1A
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Symbol
V_Z
Z_Z
Z_ZK
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
I_Z = 0.5 mA
V_R = 5 V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
6.5
6.8
7.1
V
¾
¾
50
W
¾
¾
100
W
¾
¾
0.5
mA
¾
6.0
¾
pF
Guaranteed Level of ESD Immunity
Marking
Test Condition
ESD Immunity Level
CU
IEC61000-4-2
(contact discharge)
±8 kV
Equivalent Circuit
(top view)
Q1 Q2
1
2002-01-16