DF3A6.8FV Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A6.8FV
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A6.8FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P*
150
mW
T_j
150
°C
T_stg
−55~150
°C
VESM
1.CATHODE1
2.CATHODE2
3.ANODE
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
⎯
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
⎯
1-1Q1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.0015 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
V_R = 5 V
V_R = 0, f = 1MHz
Min Typ. Max Unit
6.4 6.8 7.2
V
⎯
⎯
25
Ω
⎯
⎯
0.5
μA
―
45
―
pF
1
2007-11-01