DF3A6.2LFE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A6.2LFE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A6.2LFE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
• Low Terminal capacitance: C_T = 6.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
100
mW
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
⎯
1-2SA1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.0023 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
V_R = 5 V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
5.9 6.2 6.5
V
⎯
⎯
50
Ω
⎯
⎯
2.5
μA
⎯
6.5
⎯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 8kV
1
2007-11-01