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DF3A5.6LFV Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD). | |||
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DF3A5.6LFV
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A5.6LFV
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
⢠The mounting of two devices in an ultra-compact package enables a
reduction in the number of parts and in the mounting cost.
⢠Low terminal capacitance: CT = 8.0 pF (typ.)
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
150*
mW
Tj
150
°C
Tstg
â55~150
°C
VESM
1. CATHODE1
2. CATHODE2
3. ANODE
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
â¯
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
â¯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
1-1Q1B
Weight: 1.5 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on an FR4 board (25.4 mm à 25.4 mm à 1.6 mmt)
0.5 mm
0.45 mm
0.45 mm
0.4 mm
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between cathode and anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 3.5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
5.3 5.6 6.0
V
â¯
3
â¯
Ω
â¯
â¯
1.0
μA
â
8
â
pF
1
2007-11-01
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