DF3A5.6LFE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A5.6LFE
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
DF3A5.6LFE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting cost.
z Low terminal capacitance: C_T = 8.0 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
100
mW
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
JEITA
TOSHIBA
⎯
1-2SA1A
maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 2.3 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
I_R
C_T
Test
Circuit
Test Condition
― I_Z = 5mA
― I_Z = 5mA
― V_R =3.5V
― V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
5.3 5.6 6.0
V
―
―
50
Ω
―
―
1.0
μA
―
8
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Judgment contents: No element destruction
± 8kV
1
2007-11-01