DF3A5.6FE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A5.6FE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A5.6FE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
100
mW
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
⎯
JEITA
⎯
TOSHIBA
1-2SA1A
Weight: 0.0023 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5mA
I_Z = 5mA
V_R =2.5V
V_R = 0, f = 1MHz
Min Typ. Max Unit
5.3 5.6 6.0
V
―
―
40
Ω
―
―
1.0
μA
―
65
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 30kV
1
2007-11-01