DF3A3.6FV Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF3A3.6FV
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A3.6FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of two devices on an ultra-compact package reduces the
number of parts and lowers assembly cost.
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P*
150
mW
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
VESM
1.CATHODE1
2.CATHODE2
3.ANODE
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
JEITA
⎯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
1-1Q1B
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.0015 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
*: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
V_R = 1.8 V
V_R = 0, f = 1MHz
Min Typ. Max Unit
3.4 3.6 3.8
V
―
―
130
Ω
―
―
100
μA
―
110
―
pF
1
2007-11-01