|
DF3A3.3FV Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD). | |||
|
DF3A3.3FV
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A3.3FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
⢠The mounting of two devices on an ultra-compact package reduces the
number of parts and lowers assembly cost.
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P*
150
mW
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
â55 ~ 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
VESM
1. CATHODE1
2. CATHODE2
3. ANODE
temperature/current/voltage and the significant change in
JEDEC
â¯
temperature, etc.) may cause this product to decrease in the
JEITA
â¯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
TOSHIBA
1-1Q1B
maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.0015 g (typ.)
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
*: Mounted on FR4 board (25.4 mm à 25.4 mm à 1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 1.5 V
VR = 0, f = 1MHz
Min Typ. Max Unit
3.1 3.3 3.5
V
â
â
130
Ω
â
â
100
μA
â
115
â
pF
1
2007-11-01
|
▷ |