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DF3A3.3FE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD). | |||
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DF3A3.3FE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A3.3FE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
⢠The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
100
mW
Tj
125
°C
Tstg
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
â¯
JEITA
â¯
TOSHIBA
1-2SA1A
Weight: 0.0023 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR =1 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
3.1 3.3 3.5
V
â¯
â¯
130
â¦
â¯
â¯
20
μA
â 115 â
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 30 kV
1
2007-11-01
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