DF2S6.8FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF2S6.8FS
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S6.8FS
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z 2terminal ultra small package suitable for mounting on small space.
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
0.2
0.07^M A ^±0.05
0.1±0.05
Characteristic
Symbol
Rating
Unit
Power dissipation
P
150*
mW
0.48^+-00..0032
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high ^fSC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
⎯
reliability significantly even if the operating conditions (i.e.
JEITA
⎯
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
1-1L1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 0.0006 g (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.
Pad Dimension(Reference)Unit : mm
0.85
0.26
0.21
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5mA
I_Z = 5mA
V_R = 5V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
6.4 6.8 7.2
V
―
―
30
Ω
―
―
0.5
μA
―
25
―
pF
1
2007-11-01