DF2S5.6S Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S5.6S
DF2S5.6S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z 2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
150*
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
⎯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
TOSHIBA
⎯
1-1K1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 0.0001 g (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
V_Z
Z_Z
I_R
C_T
Test Condition
I_Z = 5 mA
I_Z = 5 mA
V_R = 3.5 V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
5.3 5.6 6.0
V
―
―
30
Ω
―
―
1
μA
―
40
―
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(contact discharge)
ESD Immunity Level
±30 kV
Criterion: No damage to device elements
Marking
6.
Equivalent Circuit (Top View)
1
2007-11-01