DF2S24UCT_14 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – ESD Protection Diodes Silicon Epitaxial Planar

ESD Protection Diodes Silicon Epitaxial Planar
DF2S24UCT
DF2S24UCT
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Cathode
2: Anode
CST2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
V_ESD
±8
kV
Junction temperature
T_j
150

Storage temperature
T_stg
-55 to 150

Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2010-05
1
2014-04-15
Rev.3.0