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DF2S24UCT Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge(ESD)
TOSHIBA Diodes for Protecting against ESD
DF2S24UCT
DF2S24UCT
Product for Use Only as Protection against Electrostatic Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
Unit: mm
0.38+-00..0023
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
150*
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
0.6±0.05
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
0.5±0.03 0.05±0.03
CST2
JEDEC
JEITA
TOSHIBA
―
―
1-1P1A
Weight: 0.7 mg (typ.)
Characteristic
Reverse stand-off voltage
(between Cathode and Anode)
Reverse breakdown voltage
(between Cathode and Anode)
Reverse current
(between Cathode and Anode)
Total capacitance
(between Cathode and Anode)
Reverse stand-off voltage
(between Anode and Cathode)
Reverse breakdown voltage
(between Anode and Cathode)
Reverse current
(between Anode and Cathode)
Symbol
Test Condition
VRWM(1) ―
VBR(1)
IR = 1 mA
IR(1)
VRWM = 19 V
CT
VR = 0 V, f = 1 MHz
VRWM(2) ―
VBR(2)
IR = 1 mA
IR(2)
VRWM = 5 V
Min Typ. Max Unit
―
―
19
V
22.0 ―
―
V
―
―
0.5
μA
―
1.6
―
pF
―
―
5
V
5.3
―
―
V
―
―
0.1
μA
Marking
Equivalent Circuit (Top View)
RU
1
2011-11-10
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