DF2S12S Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD).

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S12S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
DF2S12S
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z 2terminal ultra small package suitable for mounting on small space.
z Low total capacitance: C_T = 15 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P*
150
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
⎯
1-1K1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.001 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
V_Z
Z_Z
I_R
C_T
Test
Circuit
Test Condition
― I_Z = 5 mA
― I_Z = 5 mA
― V_R =9 V
― V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
11.4 12.0 12.6
V
―
―
25
Ω
―
― 0.05 μA
―
15
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(contact discharge)
Criterion: No damage to device elements
± 20 kV
1
2007-11-01