DF2S12FU_14 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diodes for Protecting against ESD

TOSHIBA Diodes for Protecting against ESD
DF2S12FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• Two-pin ultra-small packages are suitable for higher mounting
densities.
• Small total capacitance: CT = 15pF (typ.)
DF2S12FU
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
P
150
mW
T_j
125
°C
T_stg
−55 to 125
°C
USC
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 4.5 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Symbol
V_Z
Z_Z
Z_ZK
I_R
C_T
Test Condition
I_Z = 5mA
I_Z = 5mA
I_Z = 0.5mA
V_R = 9V
V_R = 0V , f=1MHz
Min Typ. Max Unit
11.4 12.0 12.6
V
―
10
―
Ω
―
20
―
Ω
―
―
0.05
μA
―
15
―
pF
Marking
Equivalent Circuit (Top View)
ZL
Start of commercial production
1998-09
1
2014-03-01