DF2S12FU_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Diodes for Protecting Against ESD

TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
DF2S12FU
Diodes for Protecting Against ESD
z Two-pin ultra-small packages are suitable for higher mounting
densities.
z Small total capacitance: CT = 15pF (typ.)
z Zener voltage correspond to E24 series.
DF2S12FU
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
Weight: 4.5 mg
―
―
1-1E1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Symbol
V_Z
Z_Z
Z_ZK
I_R
C_T
Test
Circuit
Test Condition
― I_Z = 5mA
― I_Z = 5mA
― I_Z = 0.5mA
― V_R = 9V
― V_R = 0V
Marking
Equivalent Circuit (Top View)
Min Typ. Max Unit
11.4 12.0 12.6
V
―
10
―
Ω
―
20
―
Ω
―
― 0.05 μA
―
15
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(contact discharge)
Criterion: No damage to device elements
± 20 kV
1
2007-11-01