DF2B6M4SL Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – This product is designed for protection against electrostatic discharge and is not intended for any other purpose, including, but not limited to, voltage regulation.

TOSHIBA Diodes for Protecting against ESD
DF2B6M4SL
Application
- ESD Protection
Note: This product is designed for protection against electrostatic discharge
(ESD) and is not intended for any other purpose, including, but not limited to,
voltage regulation.
Abusolute Maximum Ratings (Ta = 25°C)
DF2B6M4SL
Characteristic
Symbol
Rating
Unit
Electrostatic discharge voltage
IEC61000-4-2(Contact)
IEC61000-4-2(Air)
V_ESD
(Note 1)
± 23
± 25
kV
Peak pulse power ( tp = 8 / 20 s )
P_PK
30
W
Maximum peak pulse current ( tp = 8 / 20 s )
I_PP
(Note 2)
2
A
Junction temperature
T_j
150
C
Storage temperature range
T_stg
−55 to 150
C
Note1 : according to IEC61000-4-2
SL2
Note2 : according to IEC61000-4-5
Note3:Using continuously under heavy loads (e.g. the application of high JEDEC
temperature/current/voltage and the significant change in temperature, etc.) _JEITA
may cause this product to decrease in the reliability significantly even if the _TOSHIBA
operating conditions (i.e. operating temperature/current/voltage, etc.) are _{Weight: 0.2 mg (typ.)}
within the absolute maximum ratings.Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/ “Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
1:Pin1
2:Pin2
―
―
―
Electrical Characteristics (Ta = 25°C)
VRWM : Working peak reverse voltage
VBR : Reverse breakdown voltage
IBR : Reverse breakdown current
IR : Reverse Current
VC : Clamping Voltage
IPP : Peak pulse current
RDYN : Dynamic resistance
1
2015-09-29