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DF2B6.8FS Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Diodes for Protecting against ESD | |||
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TOSHIBA Diodes for Protecting against ESD
DF2B6.8FS
DF2B6.8FS
Product for Use Only as Protection against Electrostatic Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
Unit in mm
0.6±0.05
A
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
150*
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
â55 to 150
°C
*: Mounted on a glass epoxy circuit board of 20 mm à 20 mm,
pad dimension of 4 mm à 4 mm.
0.2
0.07M A ±0.05
0.1±0.05
0.48+-00..0032
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (âHandling Precautionsâ/
âDerating Concept and Methodsâ) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
fSC
JEDEC
JEITA
TOSHIBA
â
â
1-1L1A
Weight: 0.6 mg (typ.)
Pad Dimension (Reference) Unit : mm
0.85
0.26
0.21
Electrical Characteristics (Ta = 25°C)
Characteristic
Reverse stand-off voltage
Reverse breakdown voltage
Reverse current
Total capacitance
Symbol
VRWM
VR
IR
CT
Test Condition
â
IR = 1 mA
VRWM = 5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
â
â
5.0
V
5.8 6.8 7.8
V
â
â
0.5
μA
â
15
â
pF
1
2009-02-26
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