DF2B6.8CT Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Product for Use Only as Protection against Electrostatic Discharge (ESD)

TOSHIBA Diodes for Protecting against ESD
DF2B6.8CT
DF2B6.8CT
Product for Use Only as Protection against Electrostatic Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
0.6±0.05
Unit in mm
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T_j
T_stg
Rating
Unit
150*
mW
150
°C
−55 to 150
°C
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
CST2
JEDEC
JEITA
TOSHIBA
―
―
1-1P1A
Weight: 0.7 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Reverse stand-off voltage
Reverse breakdown voltage
Reverse current
Total capacitance
Symbol
V_RWM
V_R
I_R
C_T
Test Condition
―
I_R = 1 mA
V_RWM = 5 V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
―
―
5.0
V
5.8 6.8 7.8
V
―
―
0.5
μA
―
15
―
pF
Marking
Equivalent Circuit (top view)
YZ
1
2009-06-22