DF2B5M4SL Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – ESD Protection Diodes Silicon Epitaxial Planar

ESD Protection Diodes Silicon Epitaxial Planar
DF2B5M4SL
DF2B5M4SL
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Pin 1
2: Pin 2
SL2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
V_ESD
(Note 1)
±20
kV
Electrostatic discharge voltage(IEC61000-4-2)(Air)
±20
Peak pulse power(tp = 8/20 µS)
P_PK
30
W
Peak pulse current(tp = 8/20 µS)
I_PP
(Note 2)
2
A
Junction temperature
Storage temperature
T_j
150

T_stg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
©2015 Toshiba Corporation
1
Start of commercial production
2015-09
2015-12-11
Rev.1.0