DF10G6M4N Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – This product is designed for protection against electrostatic discharge and is not intended for any other purpose, including, but not limited to, voltage regulation.

TOSHIBA Diodes for Protecting against ESD
DF10G6M4N
Application
- ESD Protection
Note: This product is designed for protection against electrostatic discharge
(ESD) and is not intended for any other purpose, including, but not limited to,
voltage regulation.
Absolute Maximum Ratings (Ta = 25°C)
DF10G6M4N
Characteristic
Symbol Rating
Unit
Electrostatic discharge voltage
IEC61000-4-2(Contact)
IEC61000-4-2(Air)
V_ESD
±23
kV
(Note 1)
Peak pulse power ( tp = 8 / 20 s )
P_PK
30
W
Maximum peak pulse current ( tp = 8 / 20 s )
I_PP
2
A
(Note 2)
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
-55~150
°C
DFN10
1:I/O 6:NC
2:I/O 7:NC
3:GND 8:NC
4:I/O 9:NC
5:I/O 10:NC
Note1 : according to IEC61000-4-2
Note2 : according to IEC61000-4-5
JEDEC

Note3:Using continuously under heavy loads (e.g. the application of high JEITA

temperature/current/voltage and the significant change in temperature, _TOSHIBA

etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) ^{Weight: 3.2mg (typ.)}
are within the absolute maximum ratings.Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/ “Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
V_RWM : Working peak reverse voltage
V_BR : Reverse breakdown voltage
I_BR : Reverse breakdown current
I_R : Reverse Current
V_C : Clamping Voltage
I_PP : Peak pulse current
R_DYN : Dynamic resistance
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2015-09-29