CUS08F30 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching

Schottky Barrier Diode Silicon Epitaxial
CUS08F30
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage: V_F(3) = 0.40 V (typ.)
(2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages.
3. Packaging and Internal Circuit
CUS08F30
1: Cathode
2: Anode
USC
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
Characteristics
Symbol Note
Rating
Unit
Reverse voltage
V_R

30
V
Average rectified current
I_O (Note 1)
800
mA
Non-repetitive peak forward surge current
I_FSM (Note 2)
5
A
Junction temperature
T_j

125

Storage temperature
T_stg

-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a ceramic circuit board of 25 mm × 25 mm, Pad dimension of 2 mm × 2 mm.
Note 2: Measured with a 10 ms pulse.
1
2012-06-12
Rev.4.0