CUS03_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Mode Power Supply Applications

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS03
Switching Mode Power Supply Applications
Portable Equipment Battery Application
CUS03
Unit: mm
• Forward voltage: V_FM = 0.52 V@I_F = 0.7 A
• Average forward current: I_{F (AV)} = 0.7A
• Repetitive peak reverse voltage: V_RRM = 40 V
• Suitable for compact assembly due to small surface-mount package
“US−FLAT^TM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V_RRM
40
V
Average forward current
I_{F (AV)}
0.7
(Note 1)
A
Peak one cycle surge forward current
Junction temperature
Storage temperature range
I_FSM
T_j
T_stg
20 (50 Hz)
A
−40 to 150
°C
−40 to 150
°C
Note 1: Ta = 53°C:
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm,
Land size: 6 mm × 6 mm
Rectangular waveform (α = 180°), V_R = 20 V
JEDEC
―
JEITA
TOSHIBA
3-2B1A
Weight: 0.004 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance (junction to lead)
Symbol
Test Condition
Min
V_{FM (1)} I_FM = 0.1 A
―
V_{FM (2)} I_FM = 0.7 A
―
I_{RRM (1)} V_RRM = 5 V
―
I_{RRM (2)} V_RRM = 40 V
―
C_j
V_R = 10 V, f = 1.0 MHz
―
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
―
R_{th (j-a)}
(board thickness: 0.64 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
―
(board thickness: 1.6 t)
R_{th (j-ℓ)} Junction to lead of cathode side
―
Typ.
0.37
0.48
0.4
3.0
45
―
―
―
Max Unit
―
V
0.52
―
μA
100
―
pF
75
°C/W
150
30 °C/W
1
2006-11-13