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CUS01_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Portable Equipment Battery Application
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS01
Portable Equipment Battery Application
• Forward voltage: VFM = 0.37 V (max) @IF = 0.7 A
• Average forward current: IF (AV) = 1.0 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for compact assembly due to small surface-mount package
“US−FLATTM” (Toshiba package name)
CUS01
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF (AV)
1.0
(Note 1)
A
Peak one cycle surge forward current
IFSM
20 (50 Hz)
A
JEDEC
―
Junction temperature
Storage temperature range
Tj
−40 to 125
°C
Tstg
−40 to 150
°C
JEITA
TOSHIBA
3-2B1A
Note 1: TI = 86°C: Rectangular waveform (α = 180°), VR = 15 V
Weight: 0.004 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance (junction to lead)
Symbol
VFM (1)
VFM (2)
VFM (3)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Rth (j-I)
Test Condition
IFM = 0.1 A
IFM = 0.7 A
IFM = 1.0 A
VRRM = 5 V
VRRM = 30 V
VR = 10 V, f = 1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
Junction to lead of cathode side
Min Typ. Max Unit
― 0.25 ―
―
0.33 0.37
V
― 0.39 ―
―
50
―
μA
―
0.5 1.5 mA
―
40
―
pF
―
―
75
°C/W
―
―
150
―
―
30 °C/W
1
2006-11-13